Microchip Technology is introducing its newly-qualified 700 V and 1,200 V SiC Schottky Barrier Diode (SBD) power devices, providing EV system designers with solutions that meet AEC-Q101 quality standards across a wide range of voltage, current and package options.
Microchip says the SBD family’s avalanche performance allows designers to reduce the need for external protection circuits, reducing system cost and complexity.
“As a long-time supplier to the automotive industry, Microchip’s continued expansion of automotive-capable power solutions is leading the transformation of power systems in vehicle electrification,” said VP Leon Gross. “Our focus is to provide automotive solutions that help our clients easily transition to SiC while minimizing the risk of quality, supply and support challenges.”
Microchip’s AEC-Q101-qualified SiC SBD devices are supported with SPICE and PLECS simulation models and MPLAB Mindi Analog Simulator. Also available is a PLECS reference design model that uses Microchip’s SBDs (1,200 V, 50 A) as part of the power stage—the Vienna 3-Phase Power Factor Correction (PFC) reference design.